US PATENT SUBCLASS 257 / 31
.~.~ Josephson

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

9  DF  THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) {5}
30  DF  .~ Tunneling through region of reduced conductivity {3}
31.~.~ Josephson {4}
32  DF  .~.~.~> Particular electrode material {1}
34  DF  .~.~.~> Weak link (e.g., narrowed portion of superconductive line)
35  DF  .~.~.~> Particular barrier material
36  DF  .~.~.~> With additional electrode to control conductive state of Josephson junction

DEFINITION

Classification: 257/31

Josephson:

(under subclass 30) Subject matter wherein the device is of the form of a pair of superconductive electrodes separated by a thin, less conductive, portion, through which superconductive tunneling may occur.

SEE OR SEARCH CLASS

29, Metal Working,

25.01, for methods of making barrier layer devices possessing a Josephson junction.

216, Etching a Substrate: Processes,

3, for Josephson Junction device manufacture involving etching.

505, Superconductor Technology: Apparatus, Material, Process, 1, for high temperature superconductor Josephson devices with particular electrode materials and pertinent cross-reference art collections, including subclasses 857+ for nonlinear solid-state device, system, or circuit; and subclasses 873+ active solid-state devices.