US PATENT SUBCLASS 257 / 30
.~ Tunneling through region of reduced conductivity

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

9  DF  THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) {5}
30.~ Tunneling through region of reduced conductivity {3}
31  DF  .~.~> Josephson {4}
37  DF  .~.~> At least one electrode layer of semiconductor material {1}
39  DF  .~.~> Three or more electrode device

DEFINITION

Classification: 257/30

Tunneling through region of reduced conductivity:

(under subclass 9) Subject matter wherein the active layer through which carrier tunnelling occurs has lower electrical conductivity than the material adjacent thereto.

SEE OR SEARCH CLASS

29, Metal Working,

25.01, for methods of making barrier layer devices of the metal-insulator-metal type.

331, Oscillators,

107, for superconductive element and tunneling element oscillators.