US PATENT SUBCLASS 257 / 37
.~.~ At least one electrode layer of semiconductor material

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

9  DF  THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) {5}
30  DF  .~ Tunneling through region of reduced conductivity {3}
37.~.~ At least one electrode layer of semiconductor material {1}
38  DF  .~.~.~> Three or more electrode device

DEFINITION

Classification: 257/37

At least one electrode layer of semiconductor material:

(under subclass 30) Subject matter wherein the tunneling device has at least one electrode layer comprised of a semiconductive material.