US PATENT SUBCLASS 257 / 236
.~.~.~ Signal applied to field effect electrode

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
215  DF  .~ Charge transfer device {11}
235  DF  .~.~ Electrical input {2}
236.~.~.~ Signal applied to field effect electrode {1}
237  DF  .~.~.~.~> Charge-presetting/linear input type (e.g., fill and spill)

DEFINITION

Classification: 257/236

Signal applied to field effect electrode:

(under subclass 235) Subject matter wherein means is provided to apply an electrical signal to an electrode which has an electrical potential barrier between the electrode and the semiconductor material of the device (e.g., a MOS dielectric or Schottky contact or reverse-biased junction), as contrasted with an ohmic electrical contact to the semiconductor.