US PATENT SUBCLASS 117 / 54
.~ Liquid phase epitaxial growth (LPE)

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
54.~ Liquid phase epitaxial growth (LPE) {9}
55  DF  .~.~> With a step of measuring, testing, or sensing
56  DF  .~.~> Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) {1}
58  DF  .~.~> With pretreatment of epitaxy substrate (e.g., autodoping control, cleaning, polishing, leveling, masking)
59  DF  .~.~> Including a tipping system (e.g., rotation, pivoting)
60  DF  .~.~> Including a vertical dipping system
61  DF  .~.~> Including a sliding boat system
62  DF  .~.~> Electric current controlled or induced growth
63  DF  .~.~> Characterized by specified crystallography of the substrate
64  DF  .~.~> Precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux) {1}

DEFINITION

Classification: 117/54

Liquid phase epitaxial growth (LPE):

(under subclass 11) Subject matter characterized by single-crystal* growth onto a seed* where the product has a definite crystallos:graphic relationship to the seed*, where its thickness is not greater than the same order of magnitude than its width and/or length, and where the substrate* remains as a significant or integral part of the product in use (i.e., epitaxy*).

(1) Note. See the (5) Note located in subclass 13 for discussion of distinguishing characteristics among several liquid phase processes.

SEE OR SEARCH THIS CLASS, SUBCLASS:

13+, for processes of growing while pulling crystals from a liquid.

75, for growing whiskers or needles.

SEE OR SEARCH CLASS

118, Coating Apparatus, 400+, for corresponding apparatus.

427, Coating Processes, for processes of coating except as specifically provided for elsewhere (e.g., single-crystal* growing or onto or with semiconductor material), especially

457, 601 for processes of coating combined with direct application of electrical, magnetic, wave, or particle energy (e.g., subclasses 581, 594, 601) and subclasses 430.1+ for immersion or partial immersion.

438, Semiconductor Device Manufacturing: Process, for a process consisting of a liquid phase epitaxial growth step of a semiconductor material which is combined with named operations or treatments, including those noted in the Class 117 definition, section I, C, Note (4).