US PATENT SUBCLASS 117 / 58
.~.~ With pretreatment of epitaxy substrate (e.g., autodoping control, cleaning, polishing, leveling, masking)

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
54  DF  .~ Liquid phase epitaxial growth (LPE) {9}
58.~.~ With pretreatment of epitaxy substrate (e.g., autodoping control, cleaning, polishing, leveling, masking)

DEFINITION

Classification: 117/58

With pretreatment of epitaxy substrate (e.g., autodoping control, cleaning, polishing, leveling, masking):

(under subclass 54) Subject matter in which an epitaxy* substrate is treated prior to the growth step.

(1) Note. Pretreatment includes: cleaning such as etching; heating (e.g., to evolve impurities); or coating (e.g., masking), including when such coating is a separate layer in the final product or is removed in a subsequent step or is one which is absorbed into the final product (e.g., an adherence enhancing coating).

(2) Note. Preparation of an epitaxy* substrate is not a pretreatment step.

(3) Note. Not included as pretreatment are: merely heating up to operating temperature, or moving or positioning the substrate or the apparatus.

SEE OR SEARCH THIS CLASS, SUBCLASS:

56+, for processes which grow multiple single-crystal* layers or a single-crystal* of varying internal composition.