US PATENT SUBCLASS 117 / 63
.~.~ Characterized by specified crystallography of the substrate

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
54  DF  .~ Liquid phase epitaxial growth (LPE) {9}
63.~.~ Characterized by specified crystallography of the substrate

DEFINITION

Classification: 117/63

Characterized by specified crystallography of the substrate:

(under subclass 54) Subject matter in which the claim specifies the substrate by its crystallography (e.g., lattice orientation, Miller index).

(1) Note. Cross-referencing to art collection 902 is precluded as unnecessarily duplicative.