US PATENT SUBCLASS 117 / 64
.~.~ Precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux)

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
54  DF  .~ Liquid phase epitaxial growth (LPE) {9}
64.~.~ Precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux) {1}
65  DF  .~.~.~> Having an element in common {2}

DEFINITION

Classification: 117/64

Precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux):

(under subclass 54) Subject matter in which the precursor* is intentionally formulated to contain a non-crystallizing component or an excess of a crystallizing component relative to another crystallizing component.

(1) Note. The unusable portion of the precursor* refers to the material that would be left if the desired single-crystal* product were grown as completely as possible. Examples of processes proper for placement in this subclass are: alumina single-crystal* grown from aluminum solvent or gallium arsenide single-crystal* grown from gallium solvent.

(2) Note. Processes in which the liquid has unintended or undesired impurities which are rejected from the crystal at the precursor*-product interface are not proper for placement here.

SEE OR SEARCH THIS CLASS, SUBCLASS:

36, for similar processes using a seed pulling technique.

41+, for similar processes using a moving solid-liquid-solid zone.

68+, for non-LPE processes in which the precursor* is in a solution in which the solvent is a liquid at room temperature.

78+, for non-LPE processes in which the precursor* is in a solution and in which the solvent is a liquid at above room temperature.