US PATENT SUBCLASS 117 / 65
.~.~.~ Having an element in common

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
54  DF  .~ Liquid phase epitaxial growth (LPE) {9}
64  DF  .~.~ Precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux) {1}
65.~.~.~ Having an element in common {2}
66  DF  .~.~.~.~> Excess component or non-product appearing component contains an oxygen atom (e.g., hydrothermal)
67  DF  .~.~.~.~> Excess component or non-product appearing component contains a metal atom

DEFINITION

Classification: 117/65

Having an element in common:

(under subclass 64) Subject matter in which the product single-crystal* contains at least one element in common with the unusable portion of the precursor* composition.

(1) Note. The unusable portion of the precursor* refers to the material that would be left if the desired single-crystal* product were grown as completely as possible. Examples of processes proper for placement in this subclass are: alumina single-crystal* grown from aluminum solvent or gallium arsenide single-crystal* grown from gallium solvent.