US PATENT SUBCLASS 326 / 131
.~.~.~ With metal semiconductor junction diode (e.g., Schottky barrier, etc.)

Current as of: June, 1999
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326 /   HD   ELECTRONIC DIGITAL LOGIC CIRCUITRY

104  DF  FUNCTION OF AND, OR, NAND, NOR, or NOT {7}
124  DF  .~ Bipolar transistor (e.g., RTL, DCTL, etc.) {5}
130  DF  .~.~ Diode-transistor logic (DTL) {1}
131.~.~.~ With metal semiconductor junction diode (e.g., Schottky barrier, etc.)

DEFINITION

Classification: 326/131

With metal semiconductor junction diode (e.g., Schottky barrier, etc.):

(under subclass 130) Subject matter wherein the diode transistor logic device includes diodes of the type which operate on the principle of the injection of very highly concentrated (i.e., "hot") majority carriers across a potential difference barrier which is formed by the junction of a lightly doped semiconductor crystal and a metal layer deposited thereon.