US PATENT SUBCLASS 326 / 109
.~ Bipolar and FET


Current as of: June, 1999
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326 /   HD   ELECTRONIC DIGITAL LOGIC CIRCUITRY

104  DF  FUNCTION OF AND, OR, NAND, NOR, or NOT {7}
109.~ Bipolar and FET {1}
110  DF  .~.~> Bi-CMOS


DEFINITION

Classification: 326/109

Bipolar and FET:

(under subclass 104) Subject matter wherein the logic circuit includes two types of transistors: (a) a bipolar transistor having at least three electrodes (emitter, base, and collector), two potential barriers, and wherein a controlled current flow comprises both majority and minority carriers (i.e., holes and electrons) and (b) a unipolar transistor in which current carriers are injected at a source terminal and pass to a drain terminal through a channel of semiconductor material whose conductivity depends largely on an electrical field applied to the semiconductor from a control electrode (gate).

(1) Note. In a unipolar transistor, the source to drain current involves only one type of charge carrier (i.e., holes in a p-type channel and electrons in an n-type channel).