US PATENT SUBCLASS 326 / 108-- .~.~.~ CMOS

US PATENT SUBCLASS 326 / 108
.~.~.~ CMOS

Current as of: June, 1999
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326 /	HD	ELECTRONIC DIGITAL LOGIC CIRCUITRY

104	DF	FUNCTION OF AND, OR, NAND, NOR, or NOT {7}
105	DF	.~ Decoding {1}
106	DF	.~.~ With field-effect transistor {2}
108		.~.~.~ CMOS

DEFINITION

Classification: 326/108

CMOS:

(under subclass 106) Subject matter wherein the logic function unit includes at least two metal-oxide field-effect transistors (MOSFET), each having a channel of conductivity type opposite that of the other (e.g., p-channel vs. n-channel, etc.).

(1) Note. A MOSFET is a field-effect transistor having a metallic gate insulated from the channel by an oxide layer (e.g., SiO₂, etc.).

(2) Note. Opposite channel conductivity type, as used above, characterizes the induced channel majority carrier conduction (i.e., holes for p-channel and electrons for n-channel).