US PATENT SUBCLASS 257 / 72
.~.~ In array having structure for use as imager or display, or with transparent electrode

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
66  DF  .~ Field effect device in non-single crystal, or recrystallized, semiconductor material {3}
72.~.~ In array having structure for use as imager or display, or with transparent electrode

DEFINITION

Classification: 257/72

In array having structure for use as imager or display, or with transparent electrode:

(under subclass 66) Subject matter wherein a plurality of field effect devices in non-single crystal, or recrystallized, semiconductor material are interconnected in a monolithic chip device for generating an image of an object, light from which is incident on the device, or for displaying signals applied to the device, or having an electrode that transmits optical radiation in the infrared, visible, or ultraviolet wavelength bands.