US PATENT SUBCLASS 257 / 71
.~.~ In combination with capacitor element (e.g., DRAM)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
66  DF  .~ Field effect device in non-single crystal, or recrystallized, semiconductor material {3}
71.~.~ In combination with capacitor element (e.g., DRAM)

DEFINITION

Classification: 257/71

In combination with capacitor element (e.g., DRAM):

(under subclass 66) Subject matter wherein the field effect device in the non-single crystal, or recrystallized, semiconductor material is combined with a capacitor element.