US PATENT SUBCLASS 257 / 597
.~.~ Retrograde dopant profile (e.g., dopant concentration decreases with distance from rectifying junction)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

595  DF  VOLTAGE VARIABLE CAPACITANCE DEVICE {6}
596  DF  .~ With specified dopant profile {1}
597.~.~ Retrograde dopant profile (e.g., dopant concentration decreases with distance from rectifying junction)

DEFINITION

Classification: 257/597

Retrograde dopant profile (e.g., dopant concentration decreases with distance from rectifying junction):

(under subclass 596) Subject matter wherein the device contains a rectifying junction and wherein the variable dopant concentration decreases with distance from the rectifying junction.