US PATENT SUBCLASS 257 / 596
.~ With specified dopant profile


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

595  DF  VOLTAGE VARIABLE CAPACITANCE DEVICE {6}
596.~ With specified dopant profile {1}
597  DF  .~.~> Retrograde dopant profile (e.g., dopant concentration decreases with distance from rectifying junction)


DEFINITION

Classification: 257/596

With specified dopant profile:

(under subclass 595) Subject matter wherein the device has a cross section which has a specified impurity dopant concentration across it.