US PATENT SUBCLASS 257 / 563
.~ With multiple separately connected emitter, collector, or base regions in same transistor structure

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
563.~ With multiple separately connected emitter, collector, or base regions in same transistor structure {1}
564  DF  .~.~> Multipe base or collector regions

DEFINITION

Classification: 257/563

With multiple separately connected emitter, collector, or base regions in same transistor structure:

(under subclass 499) Subject matter wherein the device includes two or more separately connected (i.e., not commonly connected) emitter, collector, or base regions.