US PATENT SUBCLASS 257 / 561
.~.~.~ With different emitter to collector spacings or facing areas


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
557  DF  .~ Lateral bipolar transistor structure {3}
560  DF  .~.~ With multiple collectors or emitters {2}
561.~.~.~ With different emitter to collector spacings or facing areas


DEFINITION

Classification: 257/561

With different emitter to collector spacings or facing areas:

(under subclass 560) Subject matter wherein the device has different emitter to collector spacings for different collectors or emitters.