US PATENT SUBCLASS 257 / 559
.~.~ With active region formed along groove or exposed edge in semiconductor

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
557  DF  .~ Lateral bipolar transistor structure {3}
559.~.~ With active region formed along groove or exposed edge in semiconductor

DEFINITION

Classification: 257/559

With active region formed along groove or exposed edge in semiconductor:

(under subclass 557) Subject matter wherein the device has a groove or exposed edge and an active region of the bipolar transistor is formed along the groove or exposed edge.