US PATENT SUBCLASS 257 / 558
.~.~ With base region doping concentration step or gradient or with means to increase current gain

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
557  DF  .~ Lateral bipolar transistor structure {3}
558.~.~ With base region doping concentration step or gradient or with means to increase current gain

DEFINITION

Classification: 257/558

With base region doping concentration step or gradient or with means to increase current gain:

(under subclass 557) Subject matter wherein the device has a base region with a variable impurity dopant concentration across it, or wherein means are provided to increase the current gain of the transistor.