US PATENT SUBCLASS 257 / 549-- .~.~ With substrate and lightly doped surface layer of same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit)

US PATENT SUBCLASS 257 / 549
.~.~ With substrate and lightly doped surface layer of same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit)

Current as of: June, 1999
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257 /	HD	ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499	DF	INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
544	DF	.~ With pn junction isolation {8}
549		.~.~ With substrate and lightly doped surface layer of same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit)

DEFINITION

Classification: 257/549

With substrate and lightly doped surface layer of same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit):

(under subclass 544) Subject matter wherein the junction isolation is formed in an integrated circuit with a substrate and lightly doped surface layer of the same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit).