US PATENT SUBCLASS 257 / 547
.~.~ With structural means to control parasitic transistor action or leakage current

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
544  DF  .~ With pn junction isolation {8}
547.~.~ With structural means to control parasitic transistor action or leakage current

DEFINITION

Classification: 257/547

With structural means to control parasitic transistor action or leakage current:

(under subclass 544) Subject matter including means to control or reduce parasitic bipolar transistor action, i.e., bipolar transistor action in which the substrate and isolation junctions of the integrated circuit act as active junctions of an unintended bipolar transistor, or to control or reduce leakage currents associated with the pn isolation junctions.