US PATENT SUBCLASS 257 / 545
.~.~ With means to control isolation junction capacitance (e.g., lightly doped layer at isolation junction to increase depletion layer width)

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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
544  DF  .~ With pn junction isolation {8}
545.~.~ With means to control isolation junction capacitance (e.g., lightly doped layer at isolation junction to increase depletion layer width)

DEFINITION

Classification: 257/545

With means to control isolation junction capacitance (e.g., lightly doped layer at isolation junction to increase depletion layer width):

(under subclass 544) Subject matter wherein the device is provided with means, such as a lightly doped semiconductor layer at the isolation junction, to control (e.g., increase or decrease) the capacitance of the isolation junction.