US PATENT SUBCLASS 257 / 505
.~ With polycrystalline semiconductor isolation region in direct contact with single crystal active semiconductor material

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
505.~ With polycrystalline semiconductor isolation region in direct contact with single crystal active semiconductor material

DEFINITION

Classification: 257/505

With polycrystalline semiconductor isolation region in direct contact with single crystal active semiconductor material:

(under subclass 499) Subject matter wherein the means for electrically isolating different devices in the chip from each other includes at least one region of polycrystalline (i.e., made up of many small crystals) semiconductor material, which polycrystalline isolation region is in direct contact with at least one region of single crystal semiconductor material which forms part of an active solid-state device in the chip.

(1) Note. The polycrystalline isolation region may be either undoped or doped with recombination center doping, in order to make it high resistivity and thus, effectively, an electrical insulator, or may be doped with a p or n dopant in order to form a pn junction with the single crystal material of the active solid-state device so that the rectifying junction between the doped isolation region and the single crystal active portion, when reverse biased, electrically isolates the devices in the chip from each other.