US PATENT SUBCLASS 257 / 477
.~.~ With bipolar transistor

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

471  DF  SCHOTTKY BARRIER {8}
476  DF  .~ In integrated structure {1}
477.~.~ With bipolar transistor {2}
478  DF  .~.~.~> Plural Schottky barriers with different barrier heights
479  DF  .~.~.~> Connected across base-collector junction of transistor (e.g., Baker clamp)

DEFINITION

Classification: 257/477

With bipolar transistor:

(under subclass 476) Subject matter wherein the Schottky barrier device is located in a single integrated monolithic semiconductor chip with a bipolar transistor.