US PATENT SUBCLASS 257 / 442
.~.~.~.~ II-VI compound semiconductor (e.g., HgCdTe)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
428  DF  .~ Electromagnetic or particle radiation {2}
431  DF  .~.~ Light {15}
441  DF  .~.~.~ Narrow band gap semiconductor (<<1 eV) (e.g., PbSnTe) {1}
442.~.~.~.~ II-VI compound semiconductor (e.g., HgCdTe)

DEFINITION

Classification: 257/442

II-VI compound semiconductor (e.g., HgCdTe):

(under subclass 441) Subject matter wherein the narrow band gap semiconductor is a compound semiconductor taken from columns II and VI of the periodic table.