US PATENT SUBCLASS 257 / 424
.~.~ Sensor with region of high carrier recombination (e.g., magnetodiode with carriers deflected to recombination region by magnetic field)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
421  DF  .~ Magnetic field {6}
424.~.~ Sensor with region of high carrier recombination (e.g., magnetodiode with carriers deflected to recombination region by magnetic field)

DEFINITION

Classification: 257/424

Sensor with region of high carrier recombination (e.g., magnetodiode with carriers deflected to recombination region by magnetic field):

(under subclass 421) Subject matter wherein the device has a region of high carrier recombination, e.g., a magnetodiode with carriers deflected to the recombination region by the magnetic field.