US PATENT SUBCLASS 257 / 421
.~ Magnetic field


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
421.~ Magnetic field {6}
422  DF  .~.~> With magnetic field directing means (e.g., shield, pole piece, etc.)
423  DF  .~.~> Bipolar transistor magnetic field sensor (e.g., lateral bipolar transistor)
424  DF  .~.~> Sensor with region of high carrier recombination (e.g., magnetodiode with carriers deflected to recombination region by magnetic field)
425  DF  .~.~> Magnetic field detector using compound semiconductor material (e.g., GaAs, InSb, etc.)
426  DF  .~.~> Differential output (e.g., with offset ajustment means or with means to reduce temperature sensitivity)
427  DF  .~.~> Magnetic field sensor in integrated circuit (e.g., in bipolar transistor integrated circuit)


DEFINITION

Classification: 257/421

Magnetic field:

(under subclass 414) Subject matter wherein the non-electrical signal to which the active solid-state device responds, is a magnetic field.

SEE OR SEARCH THIS CLASS, SUBCLASS:

108, for regenerative type magnetic field responsive devices