| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
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| 414 | DF | RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4} |
| 421 |  | .~ Magnetic field {6} |
| 422 | DF | .~.~> With magnetic field directing means (e.g., shield, pole piece, etc.) |
| 423 | DF | .~.~> Bipolar transistor magnetic field sensor (e.g., lateral bipolar transistor) |
| 424 | DF | .~.~> Sensor with region of high carrier recombination (e.g., magnetodiode with carriers deflected to recombination region by magnetic field) |
| 425 | DF | .~.~> Magnetic field detector using compound semiconductor material (e.g., GaAs, InSb, etc.) |
| 426 | DF | .~.~> Differential output (e.g., with offset ajustment means or with means to reduce temperature sensitivity) |
| 427 | DF | .~.~> Magnetic field sensor in integrated circuit (e.g., in bipolar transistor integrated circuit) |