US PATENT SUBCLASS 257 / 419
.~.~.~.~ With thinned central active portion of semiconductor surrounded by thick insensitive portion (e.g., diaphragm type strain gauge)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
415  DF  .~ Physical deformation {3}
417  DF  .~.~ Strain sensors {1}
418  DF  .~.~.~ With means to concentrate stress {1}
419.~.~.~.~ With thinned central active portion of semiconductor surrounded by thick insensitive portion (e.g., diaphragm type strain gauge)

DEFINITION

Classification: 257/419

With thinned central active portion of semiconductor surrounded by thick insensitive portion (e.g. diaphragm type strain gauge):

(under subclass 418) Subject matter wherein the means to concentrate the physically deforming stress is a thinned central active portion of semiconductor surrounded by a thick insensitive portion (e.g., a diaphragm type strain gauge).