US PATENT SUBCLASS 257 / 211
.~.~ Multi-level metallization

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

202  DF  GATE ARRAYS {4}
208  DF  .~ With particular signal path connections {3}
211.~.~ Multi-level metallization

DEFINITION

Classification: 257/211

Multi-level metallization:

(under subclass 208) Subject matter wherein the particular signal path connections include more than one layer of conductive metal deposited on a substrate.

(1) Note. The multilayer metallization may include a layer of material made up of silicon in polycrystalline form or a silicide compound.