US PATENT SUBCLASS 257 / 205
.~.~ With bipolar transistors or with FETs of only one channel conductivity type (e.g., enhancement-depletion FETs)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

202  DF  GATE ARRAYS {4}
204  DF  .~ Having specific type of active device (e.g., CMOS) {2}
205.~.~ With bipolar transistors or with FETs of only one channel conductivity type (e.g., enhancement-depletion FETs)

DEFINITION

Classification: 257/205

With bipolar transistors or with FETs of only one channel conductivity type (e.g., enhancement-depletion FETs):

(under subclass 202) Subject matter wherein the specific type of active device comprises bipolar transistors or FETs of only one channel conductivity type (i.e, field effect transistors that can be used in the enhancement or depletion mode of operation, e.g., IGFETS).