US PATENT SUBCLASS 257 / 189
.~.~.~ Layer is a group III-V semiconductor compound

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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

183  DF  HETEROJUNCTION DEVICE {10}
184  DF  .~ Light responsive structure {4}
188  DF  .~.~ Having narrow energy band gap (<<1eV) layer (e.g., PbSnTe, HgCdTe, etc.) {1}
189.~.~.~ Layer is a group III-V semiconductor compound

DEFINITION

Classification: 257/189

Layer is a group III-V semiconductor compound:

(under subclass 188) Subject matter wherein the narrow energy band gap layer is a semiconductor compound made of one element taken from periodic table group III elements and another element taken from periodic table group V elements.