US PATENT SUBCLASS 257 / 164
.~.~ Multi-emitter region (e.g., emitter geometry or emitter ballast resistor)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
163  DF  .~ Emitter region feature {1}
164.~.~ Multi-emitter region (e.g., emitter geometry or emitter ballast resistor) {2}
165  DF  .~.~.~> Laterally symmetric regions
166  DF  .~.~.~> Radially symmetric regions

DEFINITION

Classification: 257/164

Multi-emitter region (e.g., emitter geometry or emitter ballast resistor):

(under subclass 163) Subject matter wherein the regenerative switching device has more than one emitter region.

SEE OR SEARCH THIS CLASS, SUBCLASS:

580+, for bipolar transistors with emitter ballast resistors.