US PATENT SUBCLASS 257 / 156
.~.~ Having deep level dopants or recombination centers

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
155  DF  .~ With switching speed enhancement means (e.g., Schottky contact) {1}
156.~.~ Having deep level dopants or recombination centers

DEFINITION

Classification: 257/156

Having deep level dopants or recombination centers:

(under subclass 155) Subject matter wherein the regenerative device has deep level dopants or electron-hole recombination centers with energy levels that are within the forbidden energy band and widely spaced from the conduction and valence bands of the semiconductor device.