US PATENT SUBCLASS 257 / 148
.~.~ Having impurity doping for gain reduction

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
147  DF  .~ With extended latchup current level (e.g., gate turn off "GTO" device) {5}
148.~.~ Having impurity doping for gain reduction

DEFINITION

Classification: 257/148

Having impurity doping for gain reduction:

(under subclass 147) Subject matter wherein the regenerative switching device has impurity dopant to reduce device gain of one of the equivalent transistors.

SEE OR SEARCH THIS CLASS, SUBCLASS:

142, for this subject matter in a COMFET device.