US PATENT SUBCLASS 148 / 33
BARRIER LAYER STOCK MATERIAL, P-N TYPE

Current as of: June, 1999
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148 /   HD   METAL TREATMENT

33BARRIER LAYER STOCK MATERIAL, P-N TYPE {5}
33.1  DF  .~> With contiguous layer doped to degeneracy
33.2  DF  .~> With recess, void, dislocation, grain boundaries or channel openings
33.3  DF  .~> With non-semiconductive coating thereon
33.4  DF  .~> With contiguous layers of different semiconductive material
33.5  DF  .~> Having at least three contiguous layers of semiconductive material {1}

DEFINITION

Classification: 148/33

(under the class definition) Electrically semiconductive stock which is essentially homogeneous and has at least two contiguous layers differing in the number of unbound electrons and/or differing in energy gap levels, which

exhibit a junction between the layers.

(1) Note. A semiconductive material is an electronic conductor whose resistivity at room temperature is in the range 10[supscrpt]-2 [end supscrpt]to 10[supscrpt]-9 [end supscrpt]ohm-cm (which is between metals and insulators), in which the electric charge carrier concentration increases with increasing temperatures over some temperature range. Certain semiconductive material possess two types of carriers, namely negative electrons and positive holes. The essential difference between a semiconductor and a metal is that the number of free electrons in the former is very small, the energy band being either entirely full or entirely empty, except for a few electrons and holes created by thermal excitation (intrinsic semiconductor) or by the presence of impurities. By energy gap is meant the energy range between the bottom of the conduction band and the top of the valence band. The vacant energy levels in the valence band are defined as holes.

SEE OR SEARCH CLASS

117, Single-Crystal, Oriented-Crystal and Epitaxy Growth Processes: Non-Coating Apparatus Therefor, particularly

22+, for liquid phase single crystallization techniques of the melt-pull type which produce adjoining crystals of different composition (i.e., junction formation), subclasses 56+ for liquid phase epitaxial growth techniques involving a change in a growth-influencing parameter (e.g., multilayer or junction or superlattice formation), subclasses 89+ for chemical vapor deposition techniques of forming a single crystal involving a change in a growth-influencing parameter (e.g., multilayer or junction or superlattice formation), and subclass 105 for vapor deposition techniques of forming a single crystal involving a change in a growth-influencing parameter (e.g., multilayer or junction or superlattice formation).

136, Batteries: Thermoelectric and Photoelectric, 236.1+, for thermoelectric compositions wherein at least two elements of a battery are claimed; particularly subclasses 238 and 239 for semiconductive materials.

252, Compositions,

62.3, for compositions specialized and designed for use as one member of two whose interface exhibits barrier layer properties, e.g., either P-type or N-type.

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes), appropriate subclasses for an active solid-state devices many of which include a barrier layer.

428, Stock Material or Miscellaneous Articles,

615+, for a metallic composite defined in terms of the composition of its components, especially subclass 620 for such composite having a semiconductor component, but no P-N junction.

438, Semiconductor Device Manufacturing: Process, for methods of making semiconductor structures possessing a barrier layer; see the search notes therein.