| | CLASS NOTES |
| 95 | DF | PROCESS OF MODIFYING OR MAINTAINING INTERNAL PHYSICAL STRUCTURE (I.E., MICROSTRUCTURE) OR CHEMICAL PROPERTIES OF METAL, PROCESS OF REACTIVE COATING OF METAL AND PROCESS OF CHEMICAL-HEAT REMOVING (E.G., FLAME-CUTTING, ETC.) OR BURNING OF METAL {17} |
| 22 | DF | COMPOSITIONS {2} |
| 33 | DF | BARRIER LAYER STOCK MATERIAL, P-N TYPE {5} |
| 400 | DF | STOCK {20} |
| | ****************************** |
| | CROSS-REFERENCE ART COLLECTIONS PERTAINING TO SUBCLASSES 400+ STOCK |
| | ****************************** |
| 900 | DF | ION IMPLANTED |
| 901 | DF | SURFACE DEPLETED IN AN ALLOY COMPONENT (E.G., DECARBURIZED) |
| 902 | DF | HAVING PORTIONS OF DIFFERING METALLURGICAL PROPERTIES OR CHARACTERISTICS {8} |
| | ***************************** |
| | DIGESTS |
| | ***************************** |
| DIG 1 | DF | AMORPHOUS SEMICONDUCTOR |
| DIG 2 | DF | AMPHOTERIC DOPING |
| DIG 3 | DF | ANNEAL |
| DIG 4 | DF | ANNEALING, INCOHERENT LIGHT |
| DIG 5 | DF | ANTIMONIDES OF GALLIUM OR INDIUM |
| DIG 6 | DF | APPARATUS |
| DIG 7 | DF | AUTODOPING |
| DIG 8 | DF | BI-LEVEL FABRICATION |
| DIG 9 | DF | BI-MOS |
| DIG 10 | DF | BIPOLAR TRANSISTORS-ION IMPLANTATION |
| DIG 11 | DF | BIPOLAR TRANSISTORS |
| DIG 12 | DF | BONDING E.G., ELECTROSTATIC FOR STRAIN GAUGES |
| DIG 13 | DF | BREAKDOWN VOLTAGE |
| DIG 14 | DF | CAPACITOR |
| DIG 15 | DF | CAPPING LAYER |
| DIG 16 | DF | CATALYST |
| DIG 17 | DF | CLEAN SURFACES |
| DIG 18 | DF | COMPENSATION DOPING |
| DIG 19 | DF | CONTACTS OF SILICIDES |
| DIG 20 | DF | CONTACTS, SPECIAL |
| DIG 21 | DF | CONTINUOUS PROCESS |
| DIG 22 | DF | CONTROLLED ATMOSPHERE |
| DIG 23 | DF | DEEP LEVEL DOPANTS |
| DIG 24 | DF | DEFECT CONTROL-GETTERING AND ANNEALING |
| DIG 25 | DF | DEPOSITION MULTI-STEP |
| DIG 26 | DF | DEPOSITION THRU HOLE IN MASK |
| DIG 27 | DF | DICHLOROSILANE |
| DIG 28 | DF | DICING |
| DIG 29 | DF | DIFFERENTIAL CRYSTAL GROWTH RATES |
| DIG 30 | DF | DIFFUSION |
| DIG 31 | DF | DIFFUSION AT AN EDGE |
| DIG 32 | DF | DIFFUSION LENGTH |
| DIG 33 | DF | DIFFUSION OF ALUMINUM |
| DIG 34 | DF | DIFFUSION OF BORON OR SILICON |
| DIG 35 | DF | DIFFUSION THRU A LAYER |
| DIG 36 | DF | DIFFUSION, NONSELECTIVE |
| DIG 37 | DF | DIFFUSION-DEPOSITION |
| DIG 38 | DF | DIFFUSIONS-STAGED |
| DIG 39 | DF | DISPLACE P-N JUNCTION |
| DIG 40 | DF | DOPANTS, SPECIAL |
| DIG 41 | DF | DOPING CONTROL IN CRYSTAL GROWTH |
| DIG 42 | DF | DOPING, GRADED, FOR TAPERED ETCHING |
| DIG 43 | DF | DUAL DIELECTRIC |
| DIG 44 | DF | EDGE DIFFUSION UNDER MASK |
| DIG 45 | DF | ELECTRIC FIELD |
| DIG 46 | DF | ELECTRON BEAM TREATMENT OF DEVICES |
| DIG 47 | DF | EMITTER DIP |
| DIG 48 | DF | ENERGY BEAM ASSISTED EPI GROWTH |
| DIG 49 | DF | EQUIVALENCE AND OPTIONS |
| DIG 50 | DF | ETCH AND REFILL |
| DIG 51 | DF | ETCHING |
| DIG 52 | DF | FACE TO FACE DEPOSITION |
| DIG 53 | DF | FIELD EFFECT TRANSISTORS FETS |
| DIG 54 | DF | FLAT SHEETS-SUBSTRATES |
| DIG 55 | DF | FUSE |
| DIG 56 | DF | GALLIUM ARSENIDE |
| DIG 57 | DF | GAS FLOW CONTROL |
| DIG 58 | DF | GE GERMANIUM |
| DIG 59 | DF | GERMANIUM ON SILICON OR GE-SI ON III-V |
| DIG 60 | DF | GETTERING |
| DIG 61 | DF | GETTERING-ARMORPHOUS LAYERS |
| DIG 62 | DF | GOLD DIFFUSION |
| DIG 63 | DF | GP II-IV-VI COMPOUNDS |
| DIG 64 | DF | GP II-VI COMPOUNDS |
| DIG 65 | DF | GP III-V (GENERIC) COMPOUNDS-PROCESSING |
| DIG 66 | DF | GP III-V LIQUID PHASE EPITAXY |
| DIG 67 | DF | GRADED ENERGY GAP |
| DIG 68 | DF | GRAPHITE MASKING |
| DIG 69 | DF | GREEN SHEETS |
| DIG 70 | DF | GUARD RINGS AND CMOS |
| DIG 71 | DF | HEATING, SELECTIVE |
| DIG 72 | DF | HETEROJUNCTIONS |
| DIG 73 | DF | HOLLOW BODY |
| DIG 74 | DF | HORIZONTAL MELT SOLIDIFICATION |
| DIG 75 | DF | IMIDE RESISTS |
| DIG 76 | DF | IMPLANT |
| DIG 77 | DF | IMPLANTATION OF SILICON ON SAPPHIRE |
| DIG 78 | DF | IMPURITY REDISTRIBUTION BY OXIDATION |
| DIG 79 | DF | INERT CARRIER GAS |
| DIG 80 | DF | INFRA-RED |
| DIG 81 | DF | INSULATORS |
| DIG 82 | DF | ION IMPLANTATION FETS/COMS |
| DIG 83 | DF | ION IMPLANTATION, GENERAL |
| DIG 84 | DF | ION IMPLANTATION OF COMPOUND DEVICES |
| DIG 85 | DF | ISOLATED-INTEGRATED |
| DIG 86 | DF | ISOLATED ZONES |
| DIG 87 | DF | I2L INTEGRATED INJECTION LOGIC |
| DIG 88 | DF | J-FET (JUNCTION FIELD EFFECT TRANSISTOR) |
| DIG 89 | DF | JOSEPHSON DEVICES |
| DIG 90 | DF | LASER ANNEAL |
| DIG 91 | DF | LASER BEAM PROCESSING OF FETS |
| DIG 92 | DF | LASER BEAM PROCESSING-DIODES OR TRANSISTOR |
| DIG 93 | DF | LASER BEAM TREATMENT IN GENERAL |
| DIG 94 | DF | LASER BEAM TREATMENT OF COMPOUND DEVICES |
| DIG 95 | DF | LASER DEVICES |
| DIG 96 | DF | LATERAL TRANSISTOR |
| DIG 97 | DF | LATTICE STRAIN AND DEFECTS |
| DIG 98 | DF | LAYER CONVERSION |
| DIG 99 | DF | LED, MULTICOLOR |
| DIG 100 | DF | LIFT-OFF MASKING |
| DIG 101 | DF | LIQUID PHASE EPITAXY LPE |
| DIG 102 | DF | MASK ALIGNMENT |
| DIG 103 | DF | MASK, DUAL FUNCTION E.G., DIFFUSION AND OXIDATION |
| DIG 104 | DF | MASK, MOVABLE |
| DIG 105 | DF | MASKS, METAL |
| DIG 106 | DF | MASKS, SPECIAL |
| DIG 107 | DF | MELT |
| DIG 108 | DF | MELT BACK |
| DIG 109 | DF | MEMORY DEVICES |
| DIG 110 | DF | METAL-ORGANIC CVD (RUEHRWEIN TYPE) |
| DIG 111 | DF | NARROW MASKING |
| DIG 112 | DF | NITRIDATION, DIRECT, OF SILICON |
| DIG 113 | DF | NITRIDES OF BORON OR ALUMINUM OR GALLIUM |
| DIG 114 | DF | NITRIDES OF SILICON |
| DIG 115 | DF | ORIENTATION |
| DIG 116 | DF | OXIDATION, DIFFERENTIAL |
| DIG 117 | DF | OXIDATION, SELECTIVE |
| DIG 118 | DF | OXIDE FILMS |
| DIG 119 | DF | PHOSPHIDES OF GALLIUM OR INDIUM |
| DIG 120 | DF | PHOTOCATHODES-CS COATED AND SOLAR CELL |
| DIG 121 | DF | PLASTIC TEMPERATURE |
| DIG 122 | DF | POLYCRYSTALLINE |
| DIG 123 | DF | POLYCRYSTALLINE DIFFUSE ANNEAL |
| DIG 124 | DF | POLYCRYSTALLINE EMITTER |
| DIG 125 | DF | POLYCRYSTALLINE PASSIVATION |
| DIG 126 | DF | POWER FETS |
| DIG 127 | DF | PROCESS INDUCED DEFECTS |
| DIG 128 | DF | PROTON BOMBARDMENT OF SILICON |
| DIG 129 | DF | PULSE DOPING |
| DIG 130 | DF | PURIFICATION |
| DIG 131 | DF | REACTIVE ION ETCHING RIE |
| DIG 132 | DF | RECOIL IMPLANTATION |
| DIG 133 | DF | REFLOW OXIDES AND GLASSES |
| DIG 134 | DF | REMELT |
| DIG 135 | DF | REMOVAL OF SUBSTRATE |
| DIG 136 | DF | RESISTORS |
| DIG 137 | DF | RESISTS |
| DIG 138 | DF | ROUGHENED SURFACE |
| DIG 139 | DF | SCHOTTKY BARRIER |
| DIG 140 | DF | SCHOTTKY BARRIER CONTACTS |
| DIG 141 | DF | SELF-ALIGNMENT COAT GATE |
| DIG 142 | DF | SEMICONDUCTOR-METAL-SEMICONDUCTOR |
| DIG 143 | DF | SHADOW MASKING |
| DIG 144 | DF | SHALLOW DIFFUSION |
| DIG 145 | DF | SHAPED JUNCTIONS |
| DIG 146 | DF | SHEET RESISTANCE (DOPANT PARAMETERS) |
| DIG 147 | DF | SILICIDES |
| DIG 148 | DF | SILICON CARBIDE |
| DIG 149 | DF | SILICON ON III-V |
| DIG 150 | DF | SILICON ON SAPPHIRE SOS |
| DIG 151 | DF | SIMULTANEOUS DIFFUSION |
| DIG 152 | DF | SINGLE CRYSTAL ON AMORPHOUS SUBSTRATE |
| DIG 153 | DF | SOLAR CELLS-IMPLANTATIONS-LASER BEAM |
| DIG 154 | DF | SOLID PHASE EPITAXY |
| DIG 155 | DF | SOLID SOLUBILITY |
| DIG 156 | DF | SONOS |
| DIG 157 | DF | SPECIAL DIFFUSION AND PROFILES |
| DIG 158 | DF | SPUTTERING |
| DIG 159 | DF | STRAIN GAUGES |
| DIG 160 | DF | SUPERLATTICE |
| DIG 161 | DF | TAPERED EDGES |
| DIG 162 | DF | TESTING STEPS |
| DIG 163 | DF | THICK-THIN OXIDES |
| DIG 164 | DF | THREE DIMENSIONAL PROCESSING |
| DIG 165 | DF | TRANSMUTATION DOPING |
| DIG 166 | DF | TRAVELING SOLVENT METHOD |
| DIG 167 | DF | TWO DIFFUSIONS IN ONE HOLE |
| DIG 168 | DF | V-GROOVES |
| DIG 169 | DF | VACUUM DEPOSITION (INCLUDES MOLECULAR BEAM EPITAXY |
| DIG 170 | DF | VAPOR-LIQUID-SOLID |
| DIG 171 | DF | VARISTOR |
| DIG 172 | DF | VIDICONS |
| DIG 173 | DF | WASHED EMITTER |
| DIG 174 | DF | ZENER DIODES |
