US PATENT SUBCLASS 117 / 954
.~.~ Gallium arsenide containing (e.g., GaAlAs, GaAs) {C30B 29/42}

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

937  DF  INORGANIC CONTAINING SINGLE-CRYSTAL (E.G., COMPOUND, MIXTURE, COMPOSITE) {C30B 29/10} {10}
953  DF  .~ {B,Al,Ga,In,Tl}{P,As,Sb,Bi} compound containing, except intermetallics thereof (i.e., except {Al,Ga,In,Tl}{Sb,Bi}) {C30B 29/40} {2}
954.~.~ Gallium arsenide containing (e.g., GaAlAs, GaAs) {C30B 29/42}

DEFINITION

Classification: 117/954

Gallium arsenide containing (e.g., GaAlAs, GaAs) [C30B 29/42]:

A collection of art under the art collection 953 disclosing growing a single-crystal* comprising gallium arsenide.

SEE OR SEARCH CLASS

252, Compositions,

62.3+, for barrier layer compositions, per se (i.e., dopant* containing semiconductor materials).