US PATENT SUBCLASS 117 / 953
.~ {B,Al,Ga,In,Tl}{P,As,Sb,Bi} compound containing, except intermetallics thereof (i.e., except {Al,Ga,In,Tl}{Sb,Bi}) {C30B 29/40}


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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

937  DF  INORGANIC CONTAINING SINGLE-CRYSTAL (E.G., COMPOUND, MIXTURE, COMPOSITE) {C30B 29/10} {10}
953.~ {B,Al,Ga,In,Tl}{P,As,Sb,Bi} compound containing, except intermetallics thereof (i.e., except {Al,Ga,In,Tl}{Sb,Bi}) {C30B 29/40} {2}
954  DF  .~.~> Gallium arsenide containing (e.g., GaAlAs, GaAs) {C30B 29/42}
955  DF  .~.~> Gallium phosphide containing {C30B 29/44}


DEFINITION

Classification: 117/953

[B, Al, Ga, In, Tl][P, As, Sb, Bi] compound containing, except intermetallics thereof (i.e., except [Al, Ga, In, Tl][Sb, Bi]) [C30B 29/40]:

A collection of art under the art collection 937 disclosing growing a single-crystal* comprising a compound of the formula [B, Al, Ga, In, Tl] [P, As, Sb, Bi], except the intermetallics thereof [Al, Ga, In, Tl][Sb, Bi].

SEE OR SEARCH THIS CLASS, SUBCLASS:

939, for III-V compounds which comprise an intermetallic compound such as InSb.

SEE OR SEARCH CLASS

252, Compositions,

62.3+, for barrier layer compositions, per se (i.e., dopant* containing semiconductor materials).