US PATENT SUBCLASS 117 / 937
INORGANIC CONTAINING SINGLE-CRYSTAL (E.G., COMPOUND, MIXTURE, COMPOSITE) {C30B 29/10}

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

937INORGANIC CONTAINING SINGLE-CRYSTAL (E.G., COMPOUND, MIXTURE, COMPOSITE) {C30B 29/10} {10}
938  DF  .~> Gold, silver, or platinum containing {C30B 29/52}
939  DF  .~> Free metal or intermetallic compound or silicon-metal compound based, except arsenic (e.g., alloys, SiGe, InSb) {C30B 29/40, 29/52}
940  DF  .~> Halide containing (e.g., fluorphlogopite, fluor-mica) {C30B 29/12}
941  DF  .~> Phosphorus-oxygen bond containing (e.g., phosphate (PO4)) {C30B 29/14}
942  DF  .~> Silicon-oxygen bond containing (e.g., emerald, beryl, garnet, mica) {C30B 29/16} {1}
944  DF  .~> Oxygen compound containing (e.g., yttria stabilized zirconia) {C30B 29/16} {6}
951  DF  .~> Carbide containing (e.g., SiC) {C30B 29/36}
952  DF  .~> Nitride containing (e.g., GaN, cBN) {C30B 29/38}
953  DF  .~> {B,Al,Ga,In,Tl}{P,As,Sb,Bi} compound containing, except intermetallics thereof (i.e., except {Al,Ga,In,Tl}{Sb,Bi}) {C30B 29/40} {2}
956  DF  .~> {Zn,Cd,Hg}{S,Se,Te} compound containing {C30B 29/46} {2}

DEFINITION

Classification: 117/937

INORGANIC CONTAINING SINGLE-CRYSTAL (E.G., COMPOUND, MIXTURE, COMPOSITE) [C30B 29/10]:

(under the class definition) A collection of art which discloses growing a single-crystal* comprising an inorganic compound or a mixture or a composite.

SEE OR SEARCH THIS CLASS, SUBCLASS:

928, for a collection of art disclosing growing single-crystal* of pure or intentionally doped element.

SEE OR SEARCH CLASS

164, Metal Founding,

122.1+, for methods of forming directionally solidified material, especially subclass 122.2 for methods of forming single crystal, in all cases being non-semiconductor metals*, alloys, or intermetallics in a mold.

252, Compositions, appropriate subclasses for various special use and miscellaneous compositions, per se, which may be in the form of single crystal, especially see 62.3+, for barrier layer compositions (i.e., dopant* containing semiconductor materials).

501, Compositions: Ceramic, for compositions of ceramic materials, especially

86, for synthetic single-crystal* composition of gem quality.