US PATENT SUBCLASS 117 / 939
.~ Free metal or intermetallic compound or silicon-metal compound based, except arsenic (e.g., alloys, SiGe, InSb) {C30B 29/40, 29/52}

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

937  DF  INORGANIC CONTAINING SINGLE-CRYSTAL (E.G., COMPOUND, MIXTURE, COMPOSITE) {C30B 29/10} {10}
939.~ Free metal or intermetallic compound or silicon-metal compound based, except arsenic (e.g., alloys, SiGe, InSb) {C30B 29/40, 29/52}

DEFINITION

Classification: 117/939

Free metal or intermetallic compound or silicon-metal compound based, except arsenic (e.g., alloys, SiGe, InSb) [C30B 29/40, 29/52]:

A collection of art under the art collection 937 disclosing growing a single-crystal* comprising free metal* or intermetallic compound or silicon-metal* compound; except arsenic.

(1)

Not. Included in this subclass are such inorganic compounds as PbTe.

(2) Note. In this subclass, arsenic is excluded from the elements defined as metal*.

SEE OR SEARCH THIS CLASS, SUBCLASS:

928, for a collection of art disclosing growing pure or intentionally doped single-crystal* of an element.

930, 931+ and 935, for a collection of art disclosing growing pure or intentionally doped single-crystal* of silicon.

954, for a collection of art disclosing growing single-crystal* comprising gallium arsenide and mixed crystals thereof (e.g., GaAs, GaAlAs). SEE OR SEARCH CLASS

148, Metal Treatment,

404, for stock material of the class formed by directional solidification; e.g., so as to form columnar crystals.

164, Metal Founding,

122.1+, for methods of forming directionally solidified material, especially subclass 122.2 for methods of forming single crystal, in all cases being a non-semiconductor metal*, alloy, or intermetallic in a mold.