US PATENT SUBCLASS 117 / 73
.~ Havin growth from molten state (e.g., solution melt)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
73.~ Havin growth from molten state (e.g., solution melt) {6}
74  DF  .~.~> Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)
75  DF  .~.~> Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) (e.g., VLS method)
76  DF  .~.~> Using a scavenger agent (e.g., remove, add, deplete, or redistribute impurity or dopant)
77  DF  .~.~> Gas or vapor state precursor or overpressure
78  DF  .~.~> Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, solvent, flux) {2}
81  DF  .~.~> Growth confined by a solid member other than seed or product (e.g., Bridgman-Stockbarger method) {2}

DEFINITION

Classification: 117/73

Having growth from molten state (e.g., solution melt):

(under subclass 11) Subject matter in which the liquid precursor* is a solid at room temperature, whether it is a solution or otherwise.

(1) Note. See the (5) Note located in subclass 13 for discussion of distinguishing characteristics among several liquid phase processes.

SEE OR SEARCH THIS CLASS, SUBCLASS:

19+, for processes of growing by pulling from a liquid solution containing a dopant*.

64+, for liquid phase epitaxy* using a precursor* comprising a solution.