US PATENT SUBCLASS 117 / 77
.~.~ Gas or vapor state precursor or overpressure

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
73  DF  .~ Havin growth from molten state (e.g., solution melt) {6}
77.~.~ Gas or vapor state precursor or overpressure

DEFINITION

Classification: 117/77

Gas or vapor state precursor or overpressure:

(under subclass 73) Subject matter in which an overpressure of a precursor* is used or a precursor* of the single-crystal* product is delivered during the process to the molten precursor* in the gas or vapor state.