US PATENT SUBCLASS 117 / 74
.~.~ Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)

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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
73  DF  .~ Havin growth from molten state (e.g., solution melt) {6}
74.~.~ Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)

DEFINITION

Classification: 117/74

Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing):

(under subclass 73) Subject matter in which a growth-influencing parameter, such as temperature, precursor* composition, precursor* concentration, or precursor* flow rate, is varied during growth and as a result the growth is altered, usually so that distinct layers of single-crystals* are formed or so that a single-crystal* of varying internal composition is formed.

SEE OR SEARCH THIS CLASS, SUBCLASS:

56+, for processes of liquid phase epitaxy* in which a change in growth-influencing parameter occurs.