US PATENT SUBCLASS 430 / 57.7
.~.~.~.~.~ P-type or N-type silicon containing (e.g., silicon doped with a Group 111a, or a Group Va element)

Current as of: June, 1999
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430 /   HD   RADIATION IMAGERY CHEMISTRY: PROCESS, COMPOSITION, OR PRODUCT THEREOF

31  DF  ELECTRIC OR MAGNETIC IMAGERY, E.G., XEROGRAPHY, ELECTROGRAPHY, MAGNETOGRAPHY, ETC., PROCESS, COMPOSITION, OR PRODUCT {18}
56  DF  .~ Radiation-sensitive composition or product {10}
57.1  DF  .~.~ Having plural conductive layers {2}
57.2  DF  .~.~.~ With plural charge generation layers {3}
57.4  DF  .~.~.~.~ Inorganic silicon (e.g., elemental silicon, silicon alloy or inorganic compound thereof) in one or more charge generation layers {2}
57.7.~.~.~.~.~ P-type or N-type silicon containing (e.g., silicon doped with a Group 111a, or a Group Va element)

DEFINITION

Classification: 430/57.7

P-type or n-type silicon containing (e.g., silicon doped with a Group IIIa or a Group Va element):

(under subclass 57) Subject matter .4 wherein the silicon is of p-type or n-type, e.g., doped with a Group IIIa (e.g., Boron, Aluminum, Gallium, etc.) or a Group Va (e.g., Nitrogen, Phosphorus, or Arsenic, etc.) element to give p (positive)-type or n (negative)-type conduction property.