US PATENT SUBCLASS 430 / 57.4
.~.~.~.~ Inorganic silicon (e.g., elemental silicon, silicon alloy or inorganic compound thereof) in one or more charge generation layers

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


430 /   HD   RADIATION IMAGERY CHEMISTRY: PROCESS, COMPOSITION, OR PRODUCT THEREOF

31  DF  ELECTRIC OR MAGNETIC IMAGERY, E.G., XEROGRAPHY, ELECTROGRAPHY, MAGNETOGRAPHY, ETC., PROCESS, COMPOSITION, OR PRODUCT {18}
56  DF  .~ Radiation-sensitive composition or product {10}
57.1  DF  .~.~ Having plural conductive layers {2}
57.2  DF  .~.~.~ With plural charge generation layers {3}
57.4.~.~.~.~ Inorganic silicon (e.g., elemental silicon, silicon alloy or inorganic compound thereof) in one or more charge generation layers {2}
57.5  DF  .~.~.~.~.~> With germanium (elemental, compound or alloy) in layer containing silicon {1}
57.7  DF  .~.~.~.~.~> P-type or N-type silicon containing (e.g., silicon doped with a Group 111a, or a Group Va element)

DEFINITION

Classification: 430/57.4

Inorganic silicon (e.g., elemental silicon, silicon alloy, or inorganic silicon compound thereof) in one or more charge generation layers:

(under subclass 57.2) Subject matter wherein a charge generation layer contains silicon (Si) (e.g., polycrystalline silicon, amorphous silicon, silicon alloys, inorganic compounds, etc.).

SEE OR SEARCH CLASS

136, Batteries: Thermoelectric and Photoelectric,

243-, 265 for solar cells with two or more layers.

148, Metal Treatment,

300-, 337 for p-n type stock material.

252, Compositions,

501.1, for electrically conductive compositions. 257, Active Solid-State Devices,

53-, 56 and subclasses 431-466 for active light responsive semiconductor devices containing silicon.