US PATENT SUBCLASS 349 / 28
.~.~.~.~ With silicon photodiode, N-I-N photoconductor structure, or P-I-P photoconductor structure

Current as of: June, 1999
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349 /   HD   LIQUID CRYSTAL CELLS, ELEMENTS AND SYSTEMS

19  DF  PARTICULAR EXCITATION OF LIQUID CRYSTAL {6}
24  DF  .~ Optical excitation {1}
25  DF  .~.~ With photoconductive layer (e.g., spatial light modulator(SLMs)) {4}
27  DF  .~.~.~ With silicon photoconductive layer {1}
28.~.~.~.~ With silicon photodiode, N-I-N photoconductor structure, or P-I-P photoconductor structure

DEFINITION

Classification: 349/28

With silicon photodiode, N-I-N photoconductor structure, or P-I-P photoconductor structure:

(under subclass 27) Subject matter wherein the silicon photoconductive layer has the structure of a photodiode, an N-I-N photoconductor, or a P-I-P photoconductor.