| 330 / | HD | AMPLIFIERS |
|
| 250 |  | WITH SEMICONDUCTOR AMPLIFYING DEVICE (E.G., TRANSISTOR) {21} |
| 251 | DF | .~> Including Class D amplifier |
| 252 | DF | .~> Including differential amplifier {9} |
| 262 | DF | .~> Including push-pull amplifier {8} |
| 277 | DF | .~> Including field effect transistor |
| 278 | DF | .~> Including gain control means {4} |
| 286 | DF | .~> Including distributed parameter-type coupling {1} |
| 288 | DF | .~> Including current mirror amplifier |
| 289 | DF | .~> Including temperature compensation means |
| 290 | DF | .~> Including D.C. feedback bias control for stabilization |
| 291 | DF | .~> Including signal feedback means {3} |
| 295 | DF | .~> Including plural amplifier channels |
| 296 | DF | .~> Including particular biasing arrangement |
| 297 | DF | .~> Including particular power supply circuitry |
| 298 | DF | .~> Including protection means |
| 299 | DF | .~> Including combined diverse-type semiconductor device {1} |
| 301 | DF | .~> Including balanced to unbalanced circuits and vice versa |
| 302 | DF | .~> Including frequency-responsive means in the signal transmission path {4} |
| 307 | DF | .~> Integrated circuits |
| 308 | DF | .~> Including atomic particle or radiant energy impinging on a semiconductor |
| 309 | DF | .~> Involving structure of three diverse function electrode type |
| 310 | DF | .~> Including plural stages cascaded {1} |