US PATENT SUBCLASS 257 / 657
.~ Stepped profile

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

655  DF  WITH SPECIFIED IMPURITY CONCENTRATION GRADIENT {2}
657.~ Stepped profile

DEFINITION

Classification: 257/657

Stepped profile:

(under subclass 655) Subject matter wherein the device includes at least one region of the same conductivity type (P or N) wherein the doping concentration varies abruptly (e.g., a P+ to P- junction).