US PATENT SUBCLASS 257 / 654
.~ Interdigitated pn junction or more heavily doped side of junction is concave


Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use



257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

653  DF  WITH SPECIFIED SHAPE OF PN JUNCTION {1}
654.~ Interdigitated pn junction or more heavily doped side of junction is concave


DEFINITION

Classification: 257/654

Interdigitated pn junction or more heavily doped side of junction is concave:

(under subclass 653) Subject matter wherein the device has at least one pn junction which is interdigitated (i.e., in which plural layers or fingers of n type material alternate with plural layers or fingers of p-type material, with then-type layers or fingers being parts of a single unitary n region and the p-type layers or fingers being parts of a single unitary p-region).

(1) Note. Interdigitated configurations are frequently used to increase the amount of PN junction area in a given volume of semiconductor material.